0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

0.5 Ω、CMOS、1.8 V至5.5 V、2:1多路复用器/单刀双掷开关（先合后开式开关）

ADG820是一款单芯片CMOS单刀双掷（SPDT）开关，采用亚微米工艺设计，具有低功耗、高开关速度、低导通电阻和低泄漏电流特性。它具有低功耗和+1.8 V至+5.5 V的工作电压范围，非常适合电池供电的便携式仪表应用。\n\n接通时，ADG820的各开关在两个方向的导电性能相同。该器件为先合后开式，从而可防止开关通道时发生瞬时短路。 (如需先开后合式开关，请参考ADG819 )\n\nADG820提供6引脚小型SOT-23和8引脚µSOIC两种封装，非常适合空间受限的应用。 • 低导通电阻： 0.8 Ω （最大值，125°C）\n\n• 导通电阻平坦度：0.25 Ω （最大值）\n\n• 单电源：+1.8 V至+5.5 V\n\n• 载流能力：200 mA\n\n• 汽车应用温度范围：-40°C至+125°C\n\n\n\n• 轨到轨工作\n\n• 6引脚SOT-23封装、8引脚µSOIC封装\n和6凸点MicroCSP（微芯片级封装）\n\n• 快速开关时间\n\n• 典型功耗：;

0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

0.5 n CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

0.5 n CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature