IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

I2C®兼容、宽带宽、4通道单刀双掷开关

ADG791A/ADG791G均为单芯片CMOS器件，内置四个2:1多路复用器/解复用器，可通过标准I2C 串行接口控制。二者均采用CMOS工艺设计，具有超低功耗、高开关速度和低导通电阻特性。\n\n      导通电阻曲线在整个模拟输入范围都非常平坦，宽带宽可确保拥有出色的线性度和低失真性能。这些特性以及较宽的输入信号范围，使ADG791A/ADG791G成为S视频、RGB和YPbPr视频开关等各种电视应用的理想解决方案。\n\n接通时，这些开关在两个方向的导电性能相同。在断开条件下，达到电源电压的信号电平被阻止。ADG791A/ADG791G均为先开后合式开关。ADG791G有一个通用逻辑 • 带宽：325 MHz\n\n• 低插入损耗和导通电阻：2.6 Ω（典型值）\n\n• 导通电阻平坦度：0.3 Ω（典型值\n\n• 3 V/5 V单电源供电;

IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

Wide Bandwidth, Quad, 2:1 Multiplexer

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POWER TRANSISTOR SILICON

NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation V

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability