2.5ohm, 1.8V to 5.5V, -2.5 V Triple/Quad SPDT Switches in Chip Scale Packages

GENERAL DESCRIPTION The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual ±2

2.5ohm, 1.8V to 5.5V, 2.5V, -2.5V Triple/Quad SPDT Switches in Chip Scale Packages

GENERAL DESCRIPTION The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual ±2

2.5ohm, 1.8V to 5.5V, 2.5V, -2.5V Triple/Quad SPDT Switches in Chip Scale Packages

GENERAL DESCRIPTION The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual ±2

2.5ohm, 1.8V to 5.5V, 2.5V, -2.5V Triple/Quad SPDT Switches in Chip Scale Packages

GENERAL DESCRIPTION The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual ±2

Complementary Plastic Silicon Power Transistors

BD787 -> NPN BD788 -> PNP 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS . . . designedfor lower power audio amplifier and lowcurrent, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage VCEO(sus)60 Vdc (Min) — BD787, BD78

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features • Low Collector−Emitter Sustaining Voltage − VCEO(sus)60 Vdc (Min) • High Current−Gain − Bandwidth Product fT=

CATV amplifier module

General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). The module consists of two cascaded stages both in cascode configuration. Features ■ Excellent linearity ■ Extremely low noise ■ High gain ■ Excellent return loss p

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

Integrated Circuit IF System for FM Receiver

Description: The NTE788 is a monolithic integrated circuit in a 16–Lead DIP type package that provides all the functions of a comprehensive FM–IF system. This device features a three–stage FM–IF amplifier/limiter configuration with level detectors for each stage, a doubly–balanced quadrature FM