1200-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures

MOSFET

1200-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures

1200-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VF and Q RR at elevated temperatures

4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET