1200-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures

MOSFET

CREE Silicon Carbide MOSFET Evaluation Kit

Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

丝印代码：C4D20120；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：679.24 Kbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

文件：735.05 Kbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode

文件：2.84704 Mbytes Page：6 Pages