Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

FEATURES DC Performance 400
A max Quiescent Current 10 pA max Bias Current, Warmed Up (AD648B) 1
V max Offset Voltage (AD648B) 10
V/C max Drift (AD648B) 2
V p-p Noise, 0.1 Hz to 10 Hz AC Performance 1.8 V/
s Slew Rate 1 MHz Unity Gain Bandwidth Available in Plastic Mini-DIP, CERDIP,

双通道、精密、低功耗BiFET运算放大器

AD648是一对匹配的低功耗、精密、单片运算放大器，偏置电流（最大10 pA，预热状态）和静态电流（最大400 µA）均非常低，采用离子植入FET和激光调整技术制造。在AD648的整个共模电压范围内，保证输入偏置电流符合额定性能。\n\n 经济型J级的最大保证失调电压低于2 mV，失调电压漂移低于20 µV/°C。低静态电流和低失调电压漂移使得自热效应导致的输入失调电压变化非常小。\n\n AD648推荐用于要求低功耗和出色直流与交流性能的双电源运算放大器应用。在电池供电的精密仪器前端和CMOS DAC缓冲器等应用中，AD648的低输入失调电压和漂移、低偏置电流以及低1/f • 直流性能：\n静态电流：400 µA（最大值） \n\n\n• 交流性能：\n压摆率：1.8 V/µs\n单位增益带宽：1 MHz \n\n\n\n• 提供小型塑封DIP和SOIC两种封装 \n\n• 单通道版本：AD548;

Dual Precision, Low Power BiFET Op Amp

FEATURES DC Performance 400
A max Quiescent Current 10 pA max Bias Current, Warmed Up (AD648B) 1
V max Offset Voltage (AD648B) 10
V/C max Drift (AD648B) 2
V p-p Noise, 0.1 Hz to 10 Hz AC Performance 1.8 V/
s Slew Rate 1 MHz Unity Gain Bandwidth Available in Plastic Mini-DIP, CERDIP,

Eagle UTOPIA

The Eagle-UTOPIA chipset performs all the physical-layer digital transceiver functions needed to support standards-compliant ADSL for both category 1 and category 2 systems.It integrates all the necessary elements (framer, interleave RAM, DMT co-processor, and DSP) to make your specific application

Eagle ADSL PCI-NIC

The Eagle ADSL PCI-NIC is perfect for those PC or modem OEMs who are looking for a complete and reliable PCI solution offering unparalleled design flexibility without sacrificing performance, while at the same time delivering an extremely cost competitive alternative in terms of total BOM cost and m

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

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FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 2500 V Mean forward current 2510 A Surge current 30 kA

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BD645, BD647, BD649 AND BD651 • 62.5 W at 25°C Case Temperture • 8 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 3 A