Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 2500 V Mean forward current 2510 A Surge current 30 kA

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BD645, BD647, BD649 AND BD651 • 62.5 W at 25°C Case Temperture • 8 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 3 A