航空航天用双引脚温度传感器，1uA/°K

AD590是一款双引脚集成电路温度传感器，其输出电流与绝对温度成比例。 在4 V至30 V电源电压范围内，该器件可充当一个高阻抗、恒流调节器，调节系数为1 µA/K。 片内薄膜电阻经过激光调整，可用于校准器件，使该器件在298.2K (25°C)时输出298.2 µA电流。\n AD590适用于150°C以下、目前采用传统电气温度传感器的任何温度检测应用。低成本的单芯片集成电路及无需支持电路的特点，使它成为许多温度测量应用的一种很有吸引力的备选方案。应用AD590时，无需线性化电路、精密电压放大器、电阻测量电路和冷结补偿。\n 除温度测量外，还可用于分立器件的温度补偿或校正 • 线性电流输出\n• 宽温度范围： -55°C至+150°C\n• 双引脚器件： 电压输入/电流输出\n• 激光调整，校准精度达±0.5°C\n• 出色的线性度： ±0.3°C\n• 宽电源电压范围： 4 V至30 V\n• 传感器与外壳绝缘;

丝印代码：-MH；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

丝印代码：-MN；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high