2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5330/AD5331/AD5340/AD53411 are single 8-/10-/12- bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 115 μA at 3 V and feature a power-down mode that further reduces the current to 80 nA. The devices incorporate an on-chip output buffer that can drive the

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

2.5 V to 5.5 V, 230uA, Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5332/AD5333/AD5342/AD5343 are dual 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 230 µA at 3 V, and feature a power-down pin, PD that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can dr

2.5 V to 5.5 V, 500 關A, Quad Voltage Output 8-/10-/12-Bit DACs in 10-Lead Packages

GENERAL DESCRIPTION The AD5304/AD5314/AD53241 are quad 8-, 10-, and 12-bit buffered voltage output DACs in 10-lead MSOP and 10-lead LFCSP packages that operate from a single 2.5 V to 5.5 V supply, consuming 500 μA at 3 V. Their on-chip output amplifiers allow rail-to-rail output swing to be achie

+2.5V至5.5V、500 µA、四通道、轨到轨电压输出10位DAC，内置并行接口并采用24引脚TSSOP封装

AD5334/AD5335/AD5336/AD5344分别是四通道、8/10/12位DAC，采用2.5 V至5.5 V电源供电，3 V时功耗仅500 µA，省电模式下功耗可降至80 nA。这些器件均内置一个片内输出缓冲，可将输出同时驱动至两个供电轨。\n\n 产品特色提供24引脚TSSOP封装低功耗，采用2.5 V至5.5 V单电源供电 3 V时功耗为1.5 mW，5 V时功耗为3 mW片内输出缓冲可将输出同时驱动至两个供电轨 8位并行接口用于高字节和低字节载入（通过HBEN引脚控制） • 双通道10位DAC、采用24引脚TSSOP封装\n\n• 低功耗：600 µA (5 V)，500 µA (3 V)\n\n• 关断模式的功耗：200 nA (5 V)，80 nA (3 V)\n\n• 通过设计保证单调性\n\n• 上电复位至0 V;

2.5 V to 5.5 V, 500 關A, 2-Wire Interface Interface

文件：565.67 Kbytes Page：24 Pages

2.5 V to 5.5 V, Parallel Interface Octal Voltage Output 8-/10-/12-Bit DACs

文件：476.13 Kbytes Page：24 Pages

2.5 V to 5.5 V, 500
A, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

2.5 V to 5.5 V, 500 mu
A, Parallel Interface

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

2.5 V to 5.5 V, 500A, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

文件：384.09 Kbytes Page：20 Pages

封装/外壳：24-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC DAC 10BIT V-OUT 24TSSOP 集成电路（IC） 数模转换器（DAC）

封装/外壳：24-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC DAC 10BIT V-OUT 24TSSOP 集成电路（IC） 数模转换器（DAC）

3-Phase Bridge Rectifier

Description: The NTE5335 and NTE5338 3–Phase bridge rectifiers incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable performance. Available in an industry standard screw–mount package, these devices provide 2500Vrms from all terminals to the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan