isc Silicon NPN Power Transistor

DESCRIPTION • Wide Area of Safe Operation • DC Current Gain- : hFE=50-350@IC= 0.5A • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general-purpose power swit

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GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 3.5 mW (typ.) ● Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ● Small ceramic package

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon MOS IC

Silicon NPN Transistor TV Vertical Deflection

Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: • High Voltage: VCEX = 400V • Gain Specified to 3.5A • High Frequency Response to 2.5MHz

POWER TRANSISTORS(10A,320-380V,125W)