POWER TRANSISTORS(10A,320-380V,125W)

NPN SILICON POWER DARLINGTONS

● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE(sat) of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE(sat) of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • 10A rated continuous collector current APPLICATIONS • For use in automotive ignition,switching and motor control applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • 10A rated continuous collector current APPLICATIONS • For use in automotive ignition,switching and motor control applications

NPN SILICON POWER DARLINGTON TRANSISTORS

Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 380V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.9V(Max.)@ lc= 10A APPLICATIONS • Designed for use in automotive ignition, switching and motor control applications.

Trans Darlington NPN 380V 15A 3-Pin(3+Tab) TO-247

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 3.5 mW (typ.) ● Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ● Small ceramic package

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon MOS IC

Silicon NPN Transistor TV Vertical Deflection

Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: • High Voltage: VCEX = 400V • Gain Specified to 3.5A • High Frequency Response to 2.5MHz