Overvoltage protected 10 A 800 V AC switch

This device offers a blocking voltage up to 800 V, high commutation and noise immunity, all required for inductive load control.\n The thermal management in application is improved thanks to its high maximum junction temperature (Tj = 150 °C). \n It enables applications to be compliant wit • Triac with self overvoltage protection\n• High static immunity and dynamic commutation\n• 800 V VDRM/VRRM\n• High junction temperature: Tj = 150 °C• Complies with UL standards (File ref: E81734)\n• TO-220FPAB insulated package 2000 VRMS\n• ECOPACK®2 and RoHs compliant component;

双向可控硅 AC Switch 10A 700V 10 or 35 mA IGT

Overvoltage protected AC switch

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Overvoltage protected AC switch

文件：168.29 Kbytes Page：13 Pages

Overvoltage protected AC switch

文件：168.29 Kbytes Page：13 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRIAC 700V 10A TO220AB 分立半导体产品 晶闸管 - TRIAC

双向可控硅 Triac Crowbar 35mA Switch 10A 700V

Triac with self overvoltage protection

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封装/外壳：TO-220-3 整包 包装：管件 描述：TRIAC 800V 10A TO-220FPAB 分立半导体产品 晶闸管 - TRIAC

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara