极高 CMR 2.5Amp 峰值输出电流 IGBT 门驱动光电耦合器

ACPL-3130 门驱动光电耦合器内含一个 GaAsP LED。 该 LED 与一个功率输出级集成电路进行光电耦合。这些光电耦合器可作为电机控制变频器应用中驱动功率 IGBT 和 MOSFET 的理想选择。 输出级的高工作电压范围提供了门控设备所需的驱动电压。 这些光电耦合器提供的电压与电流非常适合用来直接驱动规格达 1200V/100A 的 IGBT。对于额定值更高的 IGBT，可以通过在 ACPL-3130 输出端搭建分列的放大电路来实现。ACPL-3130 的绝缘电压为 VIORM = 630 Vpeak(选择 060) ·高速响应\n·极高共模抑制（CMR）能力\n·可靴带式供电电流\n·安全规范认证（申请中）：\n- UL 认证- 3750 Vrms/1min。ACPL-3130/J313\n- CSA认证\n- EC/EN/DIN EN 60747-5-2 认证- VIORM = 630 Vpeak (选择 060)\n·可选方案包括：\n- 060 = IEC/EN/DIN EN 60747-5-2，VIORM = 630 VPEAK- 300 = 鸥翼型表面贴装方案\n- 500 = 卷带式封装方案\n- xxxE = 无铅方案;

Very High CMR 2.5 Amp Output Current IGBT Gate Driver Optocoupler

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Very High CMR 2.5 Amp Output Current IGBT Gate Driver Optocoupler

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HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

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Reference Diode

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