N-Channel Enhancement Mode Power MOSFET

Description  Notebook AC-in load switch  Battery protection charge/discharge Features  VDS=100V  ID=83A  RDS(ON)@VGS=10V,TYP 4.3mΩ  RDS(ON)@VGS=6V,TYP 5.2mΩ  RDS(ON)@VGS=4.5V,TYP 6.8mΩ

MOSFET

N-Channel Enhancement Mode Power MOSFET

Description  Notebook AC-in load switch  Battery protection charge/discharge Features  VDS=100V  ID=83A  RDS(ON)@VGS=10V,TYP 4.3mΩ  RDS(ON)@VGS=6V,TYP 5.2mΩ  RDS(ON)@VGS=4.5V,TYP 6.8mΩ

Power Transistors

Power Transistors TO-3 Case (Continued)

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current cap

USB to CF/ATA/ATAPI Interface Controller, Mass Storage Class Compliant?

USB to CF/ATA/ATAPI Interface Controller, Mass Storage Class Compliant