POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Power Transistors

Power Transistors TO-3 Case (Continued)

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -20A • Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A • Complement to Type MJ11012 APPLICATIONS • Designed for use as output devices in complementary

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

COMPLEMENTARY SILICON POWER COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：255.63 Kbytes Page：3 Pages

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current cap

USB to CF/ATA/ATAPI Interface Controller, Mass Storage Class Compliant?

USB to CF/ATA/ATAPI Interface Controller, Mass Storage Class Compliant