MJ11011晶体管资料

  • MJ11011别名:MJ11011三极管、MJ11011晶体管、MJ11011晶体三极管

  • MJ11011生产厂家:美国摩托罗拉半导体公司

  • MJ11011制作材料:Si-P+Darl+Di

  • MJ11011性质:低频或音频放大 (LF)

  • MJ11011封装形式:直插封装

  • MJ11011极限工作电压:60V

  • MJ11011最大电流允许值:30A

  • MJ11011最大工作频率:>4MHZ

  • MJ11011引脚数:2

  • MJ11011最大耗散功率:200W

  • MJ11011放大倍数:β>1000

  • MJ11011图片代号:E-44

  • MJ11011vtest:60

  • MJ11011htest:4000100

  • MJ11011atest:30

  • MJ11011wtest:200

  • MJ11011代换 MJ11011用什么型号代替:BDX68A...C,

型号 功能描述 生产厂家&企业 LOGO 操作
MJ11011

POWERTRANSISTORS(30A,60-120V,200W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun

MOSPEC

MOSPEC

MOSPEC
MJ11011

PNPSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
MJ11011

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJ11011

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11012 APPLICATIONS •Designedforuseasoutputdevicesincomplementary

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJ11011

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-ChannelEnhancementModePowerMOSFET

Description NotebookAC-inloadswitch Batteryprotectioncharge/discharge Features VDS=100V ID=83A RDS(ON)@VGS=10V,TYP4.3mΩ RDS(ON)@VGS=6V,TYP5.2mΩ RDS(ON)@VGS=4.5V,TYP6.8mΩ

ACE

ACE Technology Co., LTD.

ACE

PVCandNylonLEDSpacers

文件:105.12 Kbytes Page:1 Pages

Heyco

Heyco

Heyco

TESTJACKS

文件:401.4 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

TESTJACKS

文件:401.4 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

CURRENTSENSEINDUCTORS

文件:26.47 Kbytes Page:1 Pages

RHOMBUS-IND

Rhombus Industries Inc.

RHOMBUS-IND

MJ11011产品属性

  • 类型

    描述

  • 型号

    MJ11011

  • 制造商

    Solid State Devices Inc(SSDI)

  • 功能描述

    DARLINGTON TRANSISTOR PNP -60V TO-3

  • 制造商

    Solid State Devices Inc(SSDI)

  • 功能描述

    DARLINGTON TRANSISTOR, PNP, -60V, TO-3; Transistor Polarity

更新时间:2024-5-1 18:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
24+
TO-3
990000
明嘉莱只做原装正品现货
ON/安森美
21+
NA
12820
只做原装,质量保证
MJ11012
8
8
SOLID
24+25+/26+27+
TO-3-2
2368
一一有问必回一特殊渠道一有长期订货一备货HK仓库
mot
21+
TO-3
12588
原装现货价格优势
MOT
TO-3
10000
MOTOROLA/摩托罗拉
22+
TO-3P
15
原装现货假一赔十
mot
2020+
TO-3
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
三年内
1983
纳立只做原装正品13590203865
CENTRAL
TO-3
22+
56000
全新原装进口,假一罚十

MJ11011芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SMC
  • TRUMPOWER
  • WPI
  • YANGJIE

MJ11011数据表相关新闻