Assembly and Handling Information

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AIoT芯片

DataSheet Download\n\n\nAB2036A DataSheet.pdf\n\nKey Features\nHigh performance 32bit RISC-V processor Core with DSP instruction \nMaximum 120MHz operating frequency; \nInternal 24KB RAM for data and program; 8K cache; \nInternal 2M bit Flash; \n24M crystal oscillator circuit with on-chip loading ca;

封装/外壳：模块，SMA 连接器 包装：盒 描述：WIFI CAVITY BAND PASS FILTER 滤波器 RF 滤波器

封装/外壳：模块，SMA 连接器 包装：盒 描述：WIFI CAVITY BAND PASS FILTER 滤波器 RF 滤波器

WiFi Cavity Band Pass Filter

Enclosure, ABS

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蜂鸣片

Bender

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ALL DIMENSIONS ARE IN MILLIMETERS

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ALL DIMENSIONS ARE IN MILLIMETERS

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PIEZO CERAMIC BENDER

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P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.