Bluetooth

\nAB1601 is an optimized single-chip solution which integrates baseband, radio and flash memory for game controller, mobile payment, and wearable device applications. It complies with Bluetooth version 4.2 with LE packet length extension feature. The embedded 4Mbit flash has high flexibility for cus • Embedded 32-bit MCU with 16/48MHz clock rate\n• 9 AIO support \n• Integrate 1.8V switching regulator and 1.8V LDO regulator\n• Ultra low power consumption for battery enabled applications\n;

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages