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型号 功能描述 生产厂家 企业 LOGO 操作
AB1202

Air source type AC pulse ion bar

文件:573.18 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

PHILIPS

飞利浦

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

PHILIPS

飞利浦

Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

VISHAYVishay Siliconix

威世威世科技公司

Battery power unit

文件:123.15 Kbytes Page:24 Pages

PHILIPS

飞利浦

Battery power unit

文件:123.15 Kbytes Page:24 Pages

PHILIPS

飞利浦

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