丝印代码：AA241；OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Typical VOLP (Output Ground Bounce)

丝印代码：AA241；OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Typical VOLP (Output Ground Bounce)

丝印代码：AA241；OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Typical VOLP (Output Ground Bounce)

丝印代码：AA241；OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Typical VOLP (Output Ground Bounce)

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

POWER TRANSISTORS(3A,40W)