GaAs IC 4 Bit Digital Attenuator 1 dB LSB Positive Control 0.5-2.5 GHz

Description The AA226-87 is a 4 bit, single positive control GaAs IC FET digital attenuator. It requires DC blocking capacitors, positive supply voltage (VS) and four individual positive bit control voltages (V1–V4). The AA226-87 is particularly suited where high attenuation accuracy, low inserti

GaAs IC 4-Bit Digital Attenuator, 1 dB LSB LF-2.5 GHz

Description The AA226-87 is a 4-bit, single positive control GaAs IC FET digital attenuator. It requires DC blocking capacitors, positive supply voltage (VS) and four individual positive bit control voltages (V1–V4). The AA226-87 is particularly suited where high attenuation accuracy, low inserti

GaAs IC 4-Bit Digital Attenuator, 1 dB LSB LF-2.5 GHz

Description The AA226-87 is a 4-bit, single positive control GaAs IC FET digital attenuator. It requires DC blocking capacitors, positive supply voltage (VS) and four individual positive bit control voltages (V1–V4). The AA226-87 is particularly suited where high attenuation accuracy, low inserti

GaAs IC 4 Bit Digital Attenuator 1 dB LSB Positive Control 0.5?.5 GHz

NPN video transistor

DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)