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5.8GHz/5.2GHz 无线通信芯片

Amiccom

点光源系列

FM

DMX512三通道LED驱动控制专用芯片

FM

Low Cost, Wide Input, 5W Single & Dual Output DC/DC Converters

文件:187.01 Kbytes Page:2 Pages

MPD

Very High Isolation, 5W Single & Dual Output DC/DC Converters

文件:834.36 Kbytes Page:2 Pages

MPD

Single & Dual Output, 5W Ultra-Wide Input Range DC/DC Converters

文件:175.26 Kbytes Page:2 Pages

MPD

Wide Input Range, 5W Single & Dual Output DC/DC Converters

文件:164.75 Kbytes Page:2 Pages

MPD

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

PHILIPS

飞利浦

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

STMICROELECTRONICS

意法半导体

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

STMICROELECTRONICS

意法半导体

A512产品属性

  • 类型

    描述

  • Data rate:

    2Mbps ~ 1Mbps

  • TRX:

    FSK/GFSK Tranceiver

  • TX Current:

    27mA @ 2dBm

  • RX Current:

    29mA

  • Sensitivity:

    -89dBm @ 2Mbps

  • TX Power:

    +2dBm

  • Package:

    QFN24

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