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型号 功能描述 生产厂家 企业 LOGO 操作

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

Single Row Terminal Blocks

文件:999.71 Kbytes Page:8 Pages

EATON

伊顿

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MOSPEC

统懋

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

MOTOROLA

摩托罗拉

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

MOTOROLA

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

MOTOROLA

摩托罗拉

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

MOSPEC

统懋

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  • A2916-双路全桥PWM电机驱动器

    UDN2916B,UDN2916EB,并UDN2916LB电机驱动器设计用于驱动一个双极步进电机绕组或双向控制两个直流电机。这两种桥有能力维持45 V和包括内部脉冲宽度调制(PWM)控制输出电流为750毫安。输出都得到了优化低输出饱和压降(小于1.8伏总源,加上在500毫安接收器)。PWM电流控制,最大输出电流为确定用户的选择参考电压和感应电阻。选择两个逻辑电平输入输出电流限制为0,33,67,或100%的最高水平。每座桥的A相输入决定负载电流方向。桥梁包括接地夹和反激式二极管对感应瞬变保护。内部产生的延误防止交叉电流开关电流方向时。特别上电顺序不是必需的。热保护电路禁用的产出,如果芯片温度超

    2012-12-7