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A10086CHNF价格

参考价格:¥793.0841

型号:A10086CHNF 品牌:Hoffman 备注:这里有A10086CHNF多少钱,2026年最近7天走势,今日出价,今日竞价,A10086CHNF批发/采购报价,A10086CHNF行情走势销售排行榜,A10086CHNF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
A10086CHNF

Continuous Hinge with Clamps, Type 4

APPLICATION A continuous hinge combined with stainless steel clamps on three sides provide environmental protection and security in indoor or outdoor applications.

HOFFMANPRODUCTS

A10086CHNF

包装:散装 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱

HOFFMAN

A10086CHNF

包装:盒 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱

HOFFMAN

A10086CHNF

Continuous Hinge with Clamps, Type 4

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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

A10086CHNF产品属性

  • 类型

    描述

  • 型号

    A10086CHNF

  • 制造商

    Pentair Technical Products/Hoffman

  • 功能描述

    ENCLOSURE JUNCTION BOX STEEL GRAY

  • 制造商

    Pentair Technical Products/Hoffman

  • 功能描述

    ENCLOSURE, JUNCTION BOX, STEEL, GRAY; Enclosure

  • Type

    Junction Box; Enclosure

  • Material

    Steel; Body

  • Color

    Grey; External Height -

  • Imperial

    10"; External Height -

  • Metric

    254mm; External Width -

  • Imperial

    8"; External Width -

  • Metric

    203mm;RoHS

  • Compliant

    Yes

更新时间:2026-5-25 8:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Allwinner
23+
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2223+
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22+
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8000
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ALLWINN
17+
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60000
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ALLWINNER/全志
20+
TFBGA441
47
全新原装现货
ALLWINNER/全志
23+
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98900
原厂原装正品现货!!
ALLWINNER/全志
26+
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20000
公司只有正品,实单来谈
ALLWINNER/全志
24+
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NS/国半
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6895
原厂全新正品旗舰店优势现货

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