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A10086CHNF价格
参考价格:¥793.0841
型号:A10086CHNF 品牌:Hoffman 备注:这里有A10086CHNF多少钱,2026年最近7天走势,今日出价,今日竞价,A10086CHNF批发/采购报价,A10086CHNF行情走势销售排行榜,A10086CHNF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
A10086CHNF | Continuous Hinge with Clamps, Type 4 APPLICATION A continuous hinge combined with stainless steel clamps on three sides provide environmental protection and security in indoor or outdoor applications. | HOFFMANPRODUCTS | ||
A10086CHNF | 包装:散装 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱 | HOFFMAN | ||
A10086CHNF | 包装:盒 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱 | HOFFMAN | ||
A10086CHNF | Continuous Hinge with Clamps, Type 4 文件:603.13 Kbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | |||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW |
A10086CHNF产品属性
- 类型
描述
- 型号
A10086CHNF
- 制造商
Pentair Technical Products/Hoffman
- 功能描述
ENCLOSURE JUNCTION BOX STEEL GRAY
- 制造商
Pentair Technical Products/Hoffman
- 功能描述
ENCLOSURE, JUNCTION BOX, STEEL, GRAY; Enclosure
- Type
Junction Box; Enclosure
- Material
Steel; Body
- Color
Grey; External Height -
- Imperial
10"; External Height -
- Metric
254mm; External Width -
- Imperial
8"; External Width -
- Metric
203mm;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Allwinner |
23+ |
TFBGA-441 |
7000 |
||||
ALLWINNER/全志 |
2223+ |
BGA |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ALLWINN |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
ALLWINN |
17+ |
BGA |
60000 |
保证原装进口现货可开17%增值税发票 |
|||
ALLWINNER/全志 |
20+ |
TFBGA441 |
47 |
全新原装现货 |
|||
ALLWINNER/全志 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
|||
ALLWINNER/全志 |
26+ |
BGA |
20000 |
公司只有正品,实单来谈 |
|||
ALLWINNER/全志 |
24+ |
BGA |
28875 |
郑重承诺只做原装进口现货 |
|||
NS/国半 |
MSOP8 |
6698 |
|||||
ALLWINNER/全志 |
2023+ |
BGA |
6895 |
原厂全新正品旗舰店优势现货 |
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A10086CHNF规格书下载地址
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DdatasheetPDF页码索引
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