位置:首页 > IC中文资料第4523页 > A10086CHFL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
A10086CHFL | 包装:散装 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱 | HOFFMAN | ||
A10086CHFL | 包装:袋 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱 | HOFFMAN | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | |||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW |
A10086CHFL产品属性
- 类型
描述
- 型号
A10086CHFL
- 制造商
HOFFMAN ENCLOSURES
- 功能描述
ENCLOSURE;NEMA 4;CONTINUOUS HINGE;QTR TURN LATCH;J BOX;10 X8 X6 ;STEEL;GRAY
- 制造商
Pentair Technical Products/Hoffman
- 功能描述
ENCLOSUREJUNCTION BOX STEEL GREY
- 制造商
HOFFMAN ENCLOSURES
- 功能描述
ENCLOSURE,JUNCTION BOX, STEEL, GREY
- 制造商
Pentair Technical Products/Hoffman
- 功能描述
ENCLOSURE,JUNCTION BOX, STEEL, GREY; Enclosure
- Type
Junction Box; Enclosure
- Material
Steel; Body
- Color
Grey; External Height -
- Imperial
10"; External Height -
- Metric
254mm; External Width -
- Imperial
8"; External Width -
- Metric
203mm ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NS |
20+ |
MSOP8 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
ALLWINE |
24+ |
BGA |
7850 |
只做原装正品现货或订货假一赔十! |
|||
ALLWINE |
26+ |
NA |
10687 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
|||
ALLWINNER/全志 |
2223+ |
BGA |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ALLWINNER/全志 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
|||
NSC |
2003+ |
LLP |
170 |
原装现货海量库存欢迎咨询 |
|||
全志 |
23+ |
BGA |
9560 |
专业配单保证原装正品假一罚十 |
|||
ALLWINN |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
全志 |
25+ |
BGA441 |
60000 |
代理原装现货,价格优势。 |
|||
NSC |
24+ |
LLP |
170 |
A10086CHFL芯片相关品牌
A10086CHFL规格书下载地址
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A10086CHFL数据表相关新闻
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DdatasheetPDF页码索引
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