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型号 功能描述 生产厂家 企业 LOGO 操作
A10086CHFL

包装:散装 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱

HOFFMAN

A10086CHFL

包装:袋 描述:JUNCTION BOX STEEL 10\ 盒子,外壳,机架 箱

HOFFMAN

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

A10086CHFL产品属性

  • 类型

    描述

  • 型号

    A10086CHFL

  • 制造商

    HOFFMAN ENCLOSURES

  • 功能描述

    ENCLOSURE;NEMA 4;CONTINUOUS HINGE;QTR TURN LATCH;J BOX;10 X8 X6 ;STEEL;GRAY

  • 制造商

    Pentair Technical Products/Hoffman

  • 功能描述

    ENCLOSUREJUNCTION BOX STEEL GREY

  • 制造商

    HOFFMAN ENCLOSURES

  • 功能描述

    ENCLOSURE,JUNCTION BOX, STEEL, GREY

  • 制造商

    Pentair Technical Products/Hoffman

  • 功能描述

    ENCLOSURE,JUNCTION BOX, STEEL, GREY; Enclosure

  • Type

    Junction Box; Enclosure

  • Material

    Steel; Body

  • Color

    Grey; External Height -

  • Imperial

    10"; External Height -

  • Metric

    254mm; External Width -

  • Imperial

    8"; External Width -

  • Metric

    203mm ;RoHS

  • Compliant

    Yes

更新时间:2026-8-4 18:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NS
20+
MSOP8
35830
原装优势主营型号-可开原型号增税票
ALLWINE
24+
BGA
7850
只做原装正品现货或订货假一赔十!
ALLWINE
26+
NA
10687
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
ALLWINNER/全志
2223+
BGA
26800
只做原装正品假一赔十为客户做到零风险
ALLWINNER/全志
23+
BGA
98900
原厂原装正品现货!!
NSC
2003+
LLP
170
原装现货海量库存欢迎咨询
全志
23+
BGA
9560
专业配单保证原装正品假一罚十
ALLWINN
22+
BGA
8000
原装正品支持实单
全志
25+
BGA441
60000
代理原装现货,价格优势。
NSC
24+
LLP
170

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