丝印代码：A043；Single Inverter Gate

文件：1.41043 Mbytes Page：27 Pages

丝印代码：A043；Single Inverter Gate

文件：1.41043 Mbytes Page：27 Pages

丝印代码：A043AJ；400W Transient Voltage Suppressor

文件：616.62 Kbytes Page：7 Pages

丝印代码：A043CJ；400W Transient Voltage Suppressor

文件：616.62 Kbytes Page：7 Pages

NPN SILICON TRANSISTOR

9012 Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: A043BJ-00 Chip thickness: 240±20µm Die size: 430× 430µm 2 Welding position size: B pole 107×107µm2, E pole 101×101µm2 Electrode metal: aluminum Back metal: gold Typical pa

包装：散装 描述：CABLE IN LINE COUPLER 1WR 6.50' 电缆组件 特种电缆组件

晶体管

晶体管

NPN SILICON TRANSISTOR

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RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Harris FSC260R die • total dose: 100 kRAD(Si) within pre-radiation parameter limits • dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical • dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits • photocurrent: 17 nA/RAD(Si)

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Harris FSC260R die • total dose: 100 kRAD(Si) within pre-radiation parameter limits • dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical • dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits • photocurrent: 17 nA/RAD(Si)

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR: 6.8 - 440 Volts PPK: 400 Watts FEATURES : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 400 Watts FEATURES : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

Silicon planar type

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