温度补偿振荡器

YL,9T,2016_4P,16.368000MHz,-1.5~+1.5ppm,-40~+85℃,-1.5~+1.5ppm,2.00 x 1.60mm,3.3V,Clipped Sine Wave,4Pins • 应用类别:通用类 消费类 商业类 商业类扩展的 工业类 \n• 应用技术:压电效应 温度补偿 锁相环 \n• 认证:无铅环保 化学品注册、评估、许可和限制 限制在电子电器设备中使用某些有害成分的指令 湿气敏感性等级 (MSL1) 静电敏感器件;

温度补偿振荡器

YL,9T,2016_4P,16.368000MHz,-1.5~+1.5ppm,-10~+70℃,-0.5~+0.5ppm,2.00 x 1.60mm,1.68~3.63V,Clipped Sine Wave,4Pins • 应用类别:通用类 消费类 商业类 商业类扩展的 工业类 \n• 应用技术:压电效应 温度补偿 锁相环 \n• 认证:无铅环保 化学品注册、评估、许可和限制 限制在电子电器设备中使用某些有害成分的指令 湿气敏感性等级 (MSL1) 静电敏感器件;

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.Low Gate Charge\nCapable of 2.5V gate drive\nSingle Drive Requirement\nRoHS Compliant

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low Gate Charge Capable of 2.5V gate drive Single Drive Requirement RoHS Compliant

N-Channel 30-V (D-S) MOSFET

文件：959.92 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low Gate Charge Capable of 2.5V gate drive Single Drive Requirement RoHS Compliant

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low Gate Charge Capable of 2.5V gate drive Single Drive Requirement RoHS Compliant

Lower Gate Charge, Capable of 2.5V Gate Drive

文件：71.61 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：240.7 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：245.66 Kbytes Page：4 Pages