Power MOSFET, N-Channel, Logic Level, Clamped MOSFET with ESD Protection

Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection • Diode Clamp Between Gate and Source\n• Active Over - Voltage Gate to Drain Clamp\n• Internal Series Gate Resistance\n;

Power MOSFET

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

Power MOSFET

文件：76.8 Kbytes Page：7 Pages

Power MOSFET

文件：76.8 Kbytes Page：7 Pages

Protected Power MOSFET

文件：72.39 Kbytes Page：6 Pages

PROTECTED POWER MOSFET

文件：66.65 Kbytes Page：6 Pages

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