Single N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

High Perform Instr, 1 Pr #16 Str TC, PVC Ins E2, PVC Jkt, PLTC

Product Description High Performance Instrumentation, 1 Pair 16AWG (19x29) Tinned Copper, PVC Insulation E2 Color Code, PVC Outer Jacket, PLTC

MACHINE SCREW PAN PHILLIPS 10-32

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6-32 BINDING HEAD SCREW

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N-Channel 20V (D-S) MOSFET

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Set SlimLine with Integrated, Single-Component SlimLine Shear Force Sensor

Set SlimLine with Integrated, Single-Component SlimLine Shear Force Sensor

Set SlimLine with Integrated, Single-Component SlimLine Shear Force Sensor

Set SlimLine with Integrated, Single-Component SlimLine Shear Force Sensor

Set SlimLine with Integrated, Single-Component SlimLine Shear Force Sensor

Simple Drive Requirement, Fast Switching Characteristic

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low vol

Fast Switching Characteristic

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Simple Drive Requirement

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