Simple Drive Requirement, Fast Switching Characteristic

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low vol

Fast Switching Characteristic

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Simple Drive Requirement

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Fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas. FE

Bipolar Power Transistors

Bipolar Power Transistors NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 85 (Min) @ IC = 1.0 Adc = 60 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC =

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ Notebo

CRT AND LCD SEMI-GRAPHIC DISPLAY PROCESSOR

DESCRIPTION STV9410 controller is a VLSI CMOS Display Processor. Time base generator, display control & refresh logic, interface for transparent MCU memory access, ROM character sets, memory to store display data & page codes and control registers are gathered on a single chip component p

CRT AND LCD SEMI-GRAPHIC DISPLAY PROCESSOR

DESCRIPTION STV9410 controller is a VLSI CMOS Display Processor. Time base generator, display control & refresh logic, interface for transparent MCU memory access, ROM character sets, memory to store display data & page codes and control registers are gathered on a single chip component p