丝印代码：8N06M；60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =8A - RDS(ON)

Mosfet

TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC

TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

文件：212.82 Kbytes Page：8 Pages

TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

文件：212.82 Kbytes Page：8 Pages