MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low

MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID

MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

文件：214 Kbytes Page：10 Pages

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

文件：214 Kbytes Page：10 Pages