MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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