MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages