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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC82005 is Designed for General Purpose Class C Power Amplifier Applications up to 2000 MHz. FEATURES: • PG = 7.0 dB min. at 5W/ 2,000 MHz • Common Base • Hermetic Microstrip Package • Omnigold™ Metalization System

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

SURFCOIL SMT INDUCTORS

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8-BIT MICRO-CONTROLLER

文件：193.93 Kbytes Page：8 Pages

10Gb Duplex Multimode 50-125 OM3 LSZH Fiber

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