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型号 功能描述 生产厂家 企业 LOGO 操作
80N10F7

N-Channel 100-V (D-S) MOSFET

文件:966.73 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

STMICROELECTRONICS

意法半导体

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

STMICROELECTRONICS

意法半导体

丝印代码:DPAK;Isc N-Channel MOSFET Transistor

文件:295.7 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

文件:282.42 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

文件:318.66 Kbytes Page:2 Pages

ISC

无锡固电

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