| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 |   | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
25+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NEC |
23+24 |
SOT263 |
17169 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
VBsemi |
24+ |
TO263 |
8000 |
新到现货，只做全新原装正品 |
|||
NEC |
25+ |
SOT-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
NEC |
25+ |
TO-263 |
2500 |
全新原装正品支持含税 |
|||
NEC |
25+ |
TO-263 |
90000 |
全新原装现货 |
|||
Natlinear/南麟 |
25+ |
PDFN5*6-8L-A |
55000 |
原厂代理部份现货价优 |
|||
NEC |
23+ |
SOT-263 |
7000 |
||||
NEC |
25+ |
SOT-263 |
10000 |
原装现货假一罚十 |
|||
NEC |
22+ |
SOT263 |
3000 |
原装正品,支持实单 |
80N04UG芯片相关品牌
80N04UG规格书下载地址
80N04UG参数引脚图相关
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80N04UG数据表相关新闻
80RXS1632AALGI
进口代理
2024-8-2380HCPS1848CBLGI原装现货，瑞萨价格超低
80HCPS1848CBLGI原装现货，瑞萨价格超低
2024-7-2580HCPS1848CBLGI瑞萨原装价格优势
80HCPS1848CBLGI瑞萨原装价格优势
2024-6-1780亿碳化硅项目建成投产！
80亿碳化硅项目建成投产！
2022-11-2380HCPS1848CBRI深圳市光华微科技有限公司18138231376
联系人：刘冬英 电话：0755-83203002 传真：0755-82532883 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-6-268100-4027
深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-6-20
DdatasheetPDF页码索引
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