位置：首页 > IC中文资料 > SVS7N65FJD2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SVS7N65FJD2 | 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de | SILAN 士兰微 |   | |
SVS7N65FJD2 | 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de | SILAN 士兰微 | | |
SVS7N65FJD2 | 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de | SILAN 士兰微 | | |
SVS7N65FJD2 | 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de | SILAN 士兰微 | | |
SVS7N65FJD2 | 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de | SILAN 士兰微 | | |
SVS7N65FJD2 | 超结MOS功率管 | SILAN 士兰微 | | |
7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de | SILAN 士兰微 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
20+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
SILAN/士兰微 |
25+ |
TO-251 |
10000 |
原厂原装,价格优势 |
|||
SILAN/士兰微 |
25+ |
TO-220FJ-3L |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
士兰微 |
24+ |
10000 |
原装现货 |
||||
SAMSUNG/三星 |
23+ |
DIP52 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VPT |
23+ |
S/N |
1365 |
DC-DC电源模块 |
|||
SECOSGMBH |
23+ |
SOD-923 |
50000 |
全新原装正品现货,支持订货 |
|||
杭州士兰 |
两年内 |
NA |
73 |
实单价格可谈 |
|||
VPT |
23+ |
金属双列直插(无法兰) |
5000 |
公司只做原装,可配单 |
SVS7N65FJD2芯片相关品牌
SVS7N65FJD2规格书下载地址
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SVS7N65FJD2数据表相关新闻
SVH-21T-P1.1 连接器，互连器件 矩形连接器 - 触头插口 触点 锡 18-22 AWG 压接
线规 - mm2：0.33~0.83 镀层厚度：- 产品类型：压线端子 线规 - 连接器，互连器件 矩形连接器 - 触头插口 触点 锡 18-22 AWG 压接
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作为世界上第一个RAD硬点负载转换器，VPT的SVGA系列在LEO、MEO、GEO和深空任务的发射系统中得到了任务验证。符合MIL-PRF-38534 K级DLA贴片机的要求，这些现成的设备可以帮助您快速地将系统安装在地面上。查看VPT的太空计划遗产。
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瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
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SVTR2812D 输入电压/V:15-50 输出功率/W:40 输出电压/V：±12 同步端:有 使能端:有 SVTR2815D 输入电压/V:15-50 输出功率/W:40 输出电压/V：±15 同步端:有 使能端:有 SVTR2805D 输入电压/V:15-50 输出功率/W:30 输出电压/V：±5 同步端:有 使能端:有
2019-11-11
DdatasheetPDF页码索引
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