N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 25 Volts CURRENT 60 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.