N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 69A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-263 & TO-220 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 69A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-263 & TO-220 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 60A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.