位置：首页 > IC中文资料第8769页 > CEU75A3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU75A3 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,60A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   |
CEU75A3 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | |
CEU75A3 | N-ChannelEnhancementModeFieldEffectTransistor 文件：372.88 Kbytes Page：4 Pages | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,69A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,60A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
CEU75A3产品属性
- 类型
描述
- 型号
CEU75A3
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
TO-252 |
499578 |
免费送样原盒原包现货一手渠道联系 |
|||
CET |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
|||
CET |
25+23+ |
TO252 |
75849 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VBsemi |
24+ |
TO252 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
CET/華瑞 |
25+ |
TO-252 |
156630 |
明嘉莱只做原装正品现货 |
|||
SR |
23+ |
TO252 |
5000 |
原装正品,假一罚十 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET(华瑞) |
2447 |
TO-252-2(DPAK) |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
CET-MOS |
100 |
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