位置：首页 > IC中文资料第8769页 > CEU75A3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU75A3 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 |   | |
CEU75A3 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 60A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired. | CET-MOS 华瑞 | | |
CEU75A3 | N Channel MOSFET | CET 华瑞 | | |
CEU75A3 | N-Channel Enhancement Mode Field Effect Transistor 文件：372.88 Kbytes Page：4 Pages | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-263 & TO-220 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 60A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package. | CET 华瑞 | |
CEU75A3产品属性
- 类型
描述
- 型号
CEU75A3
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CHIPOWER |
24+ |
SOT23-5 |
18766 |
公司现货库存,支持实单 |
|||
CET |
25+23+ |
TO252 |
75849 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
CET/華瑞 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
CEU |
2026+ |
TO-252 |
1600 |
原装正品,假一罚十! |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi |
24+ |
TO252 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
CET/華瑞 |
25+ |
TO-252 |
156630 |
明嘉莱只做原装正品现货 |
|||
SR |
23+ |
TO252 |
5000 |
原装正品,假一罚十 |
|||
CET(华瑞) |
2447 |
TO-252-2(DPAK) |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
CEU75A3规格书下载地址
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DdatasheetPDF页码索引
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