SINGLE 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH N

SINGLE 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH N

SINGLE 2-INPUT OPEN DRAIN NAND GATE

文件：112.14 Kbytes Page：9 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT） 描述：IC GATE NAND OD 1CH 2-IN SOT23-5 集成电路（IC） 门和反相器

SINGLE 2-INPUT OPEN DRAIN NAND GATE

文件：112.14 Kbytes Page：9 Pages

SINGLE 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH N

SINGLE 2-INPUT OPEN DRAIN NAND GATE

文件：112.14 Kbytes Page：9 Pages