Triple 3-input AND gate

GENERAL DESCRIPTION The 74HC/HCT11 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT11 provide the 3-input AND function. FEATURES • Output capability: standard • ICC categor

Triple 3-input AND gate

Triple 3-input AND gate

1. General description The 74HC11; 74HCT11 is a triple 3-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 to 6.0 V • CMOS low power di

Triple 3-input AND gate

General description The 74HC11; 74HCT11 are high-speed Si-gate CMOS devices that comply with JEDEC standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL). The 74HC11; 74HCT11 provides a triple 3-input AND function.

Triple 3-input AND gate

The 74HC11; 74HCT11 is a triple 3-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. • Complies with JEDEC standard no. 7A:\n• Input levels:• For 74HC11: CMOS level\n• For 74HCT11: TTL level\n\n• ESD protection:• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V\n\n• Multiple package options\n• Specified from -40 °C to +85 °C and from -40 °C to +125 °C;

Triple 3-input AND gate

The 74HC11; 74HCT11 is a triple 3-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. • Complies with JEDEC standard no. 7A:\n• Input levels:• For 74HC11: CMOS level\n• For 74HCT11: TTL level\n\n• ESD protection:• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V\n\n• Multiple package options\n• Specified from -40 °C to +85 °C and from -40 °C to +125 °C;

Triple 3-input AND gate

General description The 74HC11; 74HCT11 are high-speed Si-gate CMOS devices that comply with JEDEC standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL). The 74HC11; 74HCT11 provides a triple 3-input AND function.

Triple 3-input AND gate

Triple 3-input AND gate

GENERAL DESCRIPTION The 74HC/HCT11 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT11 provide the 3-input AND function. FEATURES • Output capability: standard • ICC categor

Triple 3-input AND gate

1. General description The 74HC11-Q100; 74HCT11-Q100 is a triple 3-input AND gate. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) standard

Triple 3-input AND gate

The 74HC11-Q100; 74HCT11-Q100 is a triple 3-input AND gate. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.\n This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40 °C to +85 °C and from -40 °C to +125 °C\n\n• Complies with JEDEC standard JESD7A\n• Input levels:• For 74HC11-Q100: CMOS level\n• For 74HCT11-Q100: TTL level\n\n• ESD protection:• MIL-STD-883, method 3015 ex;

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 3CH 3-INP 14SO 集成电路（IC） 门和反相器

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE AND 3CH 3-INP 14SO 集成电路（IC） 门和反相器

Triple 3-input AND gate

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Triple 3-input AND gate

GENERAL DESCRIPTION The 74HC/HCT11 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT11 provide the 3-input AND function. FEATURES • Output capability: standard • ICC categor

TRIPLE 3-INPUT AND GATE

DESCRIPTION The M74HC11 is an high speed CMOS TRIPLE 3-INPUT AND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 9ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETR

High Speed CMOS Logic Triple 3-Input AND Gate

文件：33.84 Kbytes Page：6 Pages