3.3V CMOS OCTAL BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ±0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μW typ. static) • Rail-to-Rail output swing for increased noise marg

3.3V CMOS OCTAL BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ±0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μW typ. static) • Rail-to-Rail output swing for increased noise marg

3.3V CMOS OCTAL BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ±0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μW typ. static) • Rail-to-Rail output swing for increased noise marg

3.3V CMOS OCTAL BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ±0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μW typ. static) • Rail-to-Rail output swing for increased noise marg

3.3V CMOS OCTAL BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ±0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μW typ. static) • Rail-to-Rail output swing for increased noise marg