FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

16-Bit Registers

文件：681.16 Kbytes Page：21 Pages

16-Bit Registers

文件：681.16 Kbytes Page：21 Pages

封装/外壳：48-BSSOP（0.295"，7.50mm 宽） 功能：标准 包装：管件 描述：IC FF D-TYPE DUAL 8BIT 48SSOP 集成电路（IC） 触发器

封装/外壳：48-BSSOP（0.295"，7.50mm 宽） 功能：标准 包装：管件 描述：IC FF D-TYPE DUAL 8BIT 48SSOP 集成电路（IC） 触发器

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig