74FCT价格

参考价格:¥4.1970

型号:74FCT157CTQG 品牌:Integrated Device Techno 备注:这里有74FCT多少钱,2026年最近7天走势,今日出价,今日竞价,74FCT批发/采购报价,74FCT行情走势销售排行榜,74FCT报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:74FCT244ATM;BiCMOS OCTAL BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design description/ordering info

TI

德州仪器

丝印代码:74FCT244ATM;BiCMOS OCTAL BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design description/ordering info

TI

德州仪器

丝印代码:74FCT244ATM;BiCMOS OCTAL BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design description/ordering info

TI

德州仪器

丝印代码:74FCT244M;BiCMOS OCTAL BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design description/ordering info

TI

德州仪器

丝印代码:74FCT244M;BiCMOS OCTAL BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design description/ordering info

TI

德州仪器

丝印代码:74FCT244M;BiCMOS OCTAL BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design description/ordering info

TI

德州仪器

丝印代码:74FCT245M;BiCMOS OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Package Options Include Pla

TI

德州仪器

丝印代码:74FCT245M;BiCMOS OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Package Options Include Pla

TI

德州仪器

丝印代码:74FCT245M;BiCMOS OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Package Options Include Pla

TI

德州仪器

丝印代码:74FCT273M;BiCMOS OCTAL D-TYPE FLIP-FLOP WITH RESET

BiCMOS Technology With Low Quiescent Power Buffered Inputs Direct Clear Input 48-mA Output Sink Current Output Voltage Swing Limited to 3.7 V Controlled Output Edge Rates Input/Output Isolation From VCC SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Applications Include: – Buf

TI

德州仪器

丝印代码:74FCT374M;BiCMOS OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power 3-State Outputs Drive Bus Lines Directly Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 48-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and C

TI

德州仪器

丝印代码:74FCT374M;BiCMOS OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power 3-State Outputs Drive Bus Lines Directly Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 48-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and C

TI

德州仪器

丝印代码:74FCT541M;BiCMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Package Options Include Pla

TI

德州仪器

丝印代码:74FCT541M;BiCMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Package Options Include Pla

TI

德州仪器

丝印代码:74FCT623M;BiCMOS OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Package Options Include Pla

TI

德州仪器

丝印代码:74FCT623M;BiCMOS OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 64-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Package Options Include Pla

TI

德州仪器

丝印代码:74FCT843AM;BiCMOS 9-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 48-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Packaged in Plastic Small-O

TI

德州仪器

丝印代码:74FCT843AM;BiCMOS 9-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS

BiCMOS Technology With Low Quiescent Power Buffered Inputs Noninverted Outputs Input/Output Isolation From VCC Controlled Output Edge Rates 48-mA Output Sink Current Output Voltage Swing Limited to 3.7 V SCR Latch-Up-Resistant BiCMOS Process and Circuit Design Packaged in Plastic Small-O

TI

德州仪器

丝印代码:74FCT2245ATPC;8-BIT TRANSCEIVER WITH 3-STATE OUTPUTS

Function and Pinout Compatible With FCT and F Logic 25-Ω Output Series Resistors to Reduce Transmission-Line Reflection Noise Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics Ioff Supports Partial-Power-Down Mode Operation Fully Compatible With TTL Input and O

TI

德州仪器

丝印代码:74FCT2245ATPC;8-BIT TRANSCEIVER WITH 3-STATE OUTPUTS

Function and Pinout Compatible With FCT and F Logic 25-Ω Output Series Resistors to Reduce Transmission-Line Reflection Noise Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics Ioff Supports Partial-Power-Down Mode Operation Fully Compatible With TTL Input and O

TI

德州仪器

FAST CMOS 1-OF-8 DECODER WITH ENABLE

DESCRIPTION: The IDT54/74FCT138/A/C are 1-of-8 decoders built using an advanced dual metal CMOS technology. The IDT54/74FCT138/A/C accept three binary weighted inputs (A0, A1, A2) and, when enabled, provide eight mutually exclusive active LOW outputs (O0- O7). The IDT54/74FCT138/A/C feature thr

IDT

FAST CMOS QUAD 2-INPUT MULTIPLEXER

FEATURES: • A, C, and D grades • Low input and output leakage ≤1μA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 specifications • Power off disab

RENESAS

瑞萨

FAST CMOS QUAD 2-INPUT MULTIPLEXER

FEATURES: • A, C, and D grades • Low input and output leakage ≤1μA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 specifications • Power off disab

RENESAS

瑞萨

FAST CMOS QUAD 2-INPUT MULTIPLEXER

FEATURES: • A, C, and D grades • Low input and output leakage ≤1μA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 specifications • Power off disab

RENESAS

瑞萨

FAST CMOS QUAD 2-INPUT MULTIPLEXER

FEATURES: • A, C, and D grades • Low input and output leakage ≤1μA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 specifications • Power off disab

RENESAS

瑞萨

FAST CMOS QUAD 2-INPUT MULTIPLEXER

FEATURES: • A, C, and D grades • Low input and output leakage ≤1μA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 specifications • Power off disab

RENESAS

瑞萨

FAST CMOS QUAD 2-INPUT MULTIPLEXER

FEATURES: • A, C, and D grades • Low input and output leakage ≤1μA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 specifications • Power off disab

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

16-Bit Buffers/Line Drivers

Features • Ioff supports partial-power-down mode operation • Edge-rate control circuitry for significantly improved noise characteristics • Typical output skew 2000V • TSSOP (19.6-mil pitch) and SSOP (25-mil pitch) packages • Industrial temperature range of –40°C to +85°C

TI

德州仪器

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

16-Bit Buffers/Line Drivers

Features • Ioff supports partial-power-down mode operation • Edge-rate control circuitry for significantly improved noise characteristics • Typical output skew 2000V • TSSOP (19.6-mil pitch) and SSOP (25-mil pitch) packages • Industrial temperature range of –40°C to +85°C

TI

德州仪器

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

16-Bit Buffers/Line Drivers

Features • Ioff supports partial-power-down mode operation • Edge-rate control circuitry for significantly improved noise characteristics • Typical output skew 2000V • TSSOP (19.6-mil pitch) and SSOP (25-mil pitch) packages • Industrial temperature range of –40°C to +85°C

TI

德州仪器

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT BUFFER/LINE DRIVER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Balanced Output Dr

RENESAS

瑞萨

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew)

RENESAS

瑞萨

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew)

RENESAS

瑞萨

74FCT产品属性

  • 类型

    描述

  • 型号

    74FCT

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-3-13 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
2026+
SOP24
1131
原装正品,假一罚十!
TI
20+
SOIC
53650
TI原装主营-可开原型号增税票
TI/德州仪器
24+
N/A
20000
原厂直供原装正品
TI/德州仪器
2450+
SOP28
6540
只做原装正品现货!或订货假一赔十!
TI
09+
SOP24
148
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TI
22+
5000
只做原装鄙视假货15118075546
TI
23+
NA
20000
National Semiconductor
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
TI
25+
24-SOIC
20948
样件支持,可原厂排单订货!
TI
23+
24-SOIC
65600

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