10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • P-N-P Inputs Reduce DC Loading • Flow-Thr

10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • P-N-P Inputs Reduce DC Loading • Flow-Thr

10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • P-N-P Inputs Reduce DC Loading • Flow-Thr

10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：251.83 Kbytes Page：9 Pages

10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：251.83 Kbytes Page：9 Pages