• State-of-the-Art BiCMOS Design

Significantly Reduces ICCZ

• ESD Protection Exceeds 2000 V Per

MIL-STD-883C, Method 3015; Exceeds

200 V Using Machine Model (C = 200 pF,

R = 0)

• 3-State Outputs Drive Bus Lines or Buffer

Memory Address Registers

• P-N-P Inputs Reduce DC Loading

• Flow-Through Architecture Optimizes

PCB Layout

• Package Options Include Plastic

Small-Outline (DW) Packages, Ceramic Chip

Carriers (FK) and Flatpacks (W), and

Standard Plastic and Ceramic 300-mil DIPs

(JT, NT)

description

These 10-bit buffers and bus drivers provide

high-performance bus interface for wide data

paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with

active-low inputs so that if either output-enable

(OE1 or OE2) input is high, all ten outputs are in

the high-impedance state. The outputs are also in

the high-impedance state during power-up and

power-down conditions. The outputs remain in the

high-impedance state while the device is powered

down.

The SN54BCT29827B is characterized for

operation over the full military temperature range

of −55°C to 125°C. The SN74BCT29827B is

characterized for operation from 0°C to 70°C.