型号 功能描述 生产厂家&企业 LOGO 操作
74864GBF

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

1:1AND1:2REGISTEREDBUFFERWITH1.8VSSTLI/O

FEATURES: •1:1and1:2registeredbuffer •1.8VOperation •SSTL_18styleclockanddatainputs •DifferentialCLKinput •ControlinputscompatiblewithLVCMOSlevels •Flow-througharchitectureforoptimumPCBdesign •Latch-upperformanceexceeds100mA •ESD>2000VperMIL-STD-883,Met

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
更新时间:2024-6-16 16:30:00
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