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型号 功能描述 生产厂家 企业 LOGO 操作
74864BFG

1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O

FEATURES: • 1:1 and 1:2 registered buffer • 1.8V Operation • SSTL_18 style clock and data inputs • Differential CLK input • Control inputs compatible with LVCMOS levels • Flow-through architecture for optimum PCB design • Latch-up performance exceeds 100mA • ESD >2000V per MIL-STD-883, Met

RENESAS

瑞萨

1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O

FEATURES: • 1:1 and 1:2 registered buffer • 1.8V Operation • SSTL_18 style clock and data inputs • Differential CLK input • Control inputs compatible with LVCMOS levels • Flow-through architecture for optimum PCB design • Latch-up performance exceeds 100mA • ESD >2000V per MIL-STD-883, Met

RENESAS

瑞萨

1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O

FEATURES: • 1:1 and 1:2 registered buffer • 1.8V Operation • SSTL_18 style clock and data inputs • Differential CLK input • Control inputs compatible with LVCMOS levels • Flow-through architecture for optimum PCB design • Latch-up performance exceeds 100mA • ESD >2000V per MIL-STD-883, Met

RENESAS

瑞萨

1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O

FEATURES: • 1:1 and 1:2 registered buffer • 1.8V Operation • SSTL_18 style clock and data inputs • Differential CLK input • Control inputs compatible with LVCMOS levels • Flow-through architecture for optimum PCB design • Latch-up performance exceeds 100mA • ESD >2000V per MIL-STD-883, Met

RENESAS

瑞萨

1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O

FEATURES: • 1:1 and 1:2 registered buffer • 1.8V Operation • SSTL_18 style clock and data inputs • Differential CLK input • Control inputs compatible with LVCMOS levels • Flow-through architecture for optimum PCB design • Latch-up performance exceeds 100mA • ESD >2000V per MIL-STD-883, Met

RENESAS

瑞萨

1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O

FEATURES: • 1:1 and 1:2 registered buffer • 1.8V Operation • SSTL_18 style clock and data inputs • Differential CLK input • Control inputs compatible with LVCMOS levels • Flow-through architecture for optimum PCB design • Latch-up performance exceeds 100mA • ESD >2000V per MIL-STD-883, Met

RENESAS

瑞萨

更新时间:2026-7-24 9:31:00
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