型号 功能描述 生产厂家 企业 LOGO 操作
71V67603S166BQ

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S166BQ

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 9MBIT PARALLEL 165CABGA 集成电路(IC) 存储器

ETC

知名厂家

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 9MBIT PARALLEL 165CABGA 集成电路(IC) 存储器

ETC

知名厂家

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

文件:986.08 Kbytes Page:23 Pages

IDT

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

文件:986.08 Kbytes Page:23 Pages

IDT

更新时间:2025-11-19 14:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
CABGA-165(13x15)
16508
原装正品现货支持实单
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Renesas Electronics America In
25+
165-TBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
RENESAS(瑞萨)/IDT
2021+
CABGA-165(13x15)
499
IDT, Integrated Device Technol
21+
48-LFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
RENESAS(瑞萨)/IDT
2447
CABGA-165(13x15)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一级代理/放心采购
RENESAS(瑞萨)/IDT
24+
CABGA165(13x15)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!

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