位置：首页 > IC中文资料 > 71V65603S150BG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
71V65603S150BG | 256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
71V65603S150BG | 封装/外壳：119-BGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 119PBGA 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：119-BGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 119PBGA 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
23+ |
PBGA-119(14x22) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
|||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
RENESAS(瑞萨)/IDT |
1921+ |
PBGA-119(14x22) |
3575 |
向鸿仓库现货,优势绝对的原装! |
|||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
RENESAS(瑞萨)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
||||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
RENESAS(瑞萨)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一级代理/放心采购 |
|||
Renesas Electronics America In |
24+ |
119-BGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
71V65603S150BG芯片相关品牌
71V65603S150BG规格书下载地址
71V65603S150BG参数引脚图相关
- 7号电池
- 7994
- 7805
- 7756
- 7705ac
- 74ls48
- 74ls373
- 74ls244
- 74ls192
- 74ls164
- 74ls138
- 74ls04
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- 74hc595
- 74hc573
- 74hc541
- 74hc244
- 74hc164
- 7490
- 7241
- 72-007
- 72-006
- 72006
- 72-005
- 72005
- 72-004
- 72004
- 72-003
- 72003
- 72002PU
- 72002NH
- 72002E
- 72-002
- 72002
- 72001PU
- 72001NH
- 72001E
- 72-001
- 72001
- 71VR1
- 71V65603Z100BQG
- 71V65603Z100BGGI
- 71V65603Z100BGG
- 71V65603S150PFGI8
- 71V65603S150PFGI
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- 71V65603S150BGGI8
- 71V65603S150BGGI
- 71V65603S150BGG8
- 71V65603S150BGG
- 71V65603S150BG8
- 71V65603S133PFGI8
- 71V65603S133PFGI
- 71V65603S133PFG8
- 71V65603S133PFG
- 71V65603S133BQI
- 71V65603S133BQGI8
- 71V65603S133BQGI
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- 71V65603S133BGI8
- 71V65603S133BGI
- 71V65603S133BGGI8
- 71V65603S133BGGI
- 71V65603S133BGG8
- 71V65603S133BGG
- 71V65603S133BG8
- 71V65603S133BG
- 71V65603S100PFGI8
- 71V65603S100PFGI
- 71RIA
- 71RC80A
- 71RC70A
- 71RC60A
- 71RC50A
- 71RC30A
- 71RC20A
- 71RC10A
- 71RB60
- 71RB50
- 71RB160
- 71RB150
- 71RB140
- 71RB130
- 71RB110
- 71RB100
- 71RA80
- 71RA60
- 71RA50
- 71RA160
71V65603S150BG数据表相关新闻
715P47354LD3
715P47354LD3
2023-4-21721-833/001-000
721-833/001-000
2023-4-197211MD9AV2BE
7211MD9AV2BE
2022-12-287165-0796新到货只做原装，诚信为本！
16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
2022-8-12719502C-2PT
https://hch01.114ic.com/
2020-11-137-215/R6C-AQ1R2B/3T原装现货
定位:TopView If-順向電流:20mA 封裝:Reel 品牌:Everlight 安裝風格:SMD/SMT 濕度敏感:Yes 產品類型:LED-Standard 原廠包裝數量:3000 子類別:LEDs
2019-11-4
DdatasheetPDF页码索引
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