71V3576S133PFG价格

参考价格:¥24.2307

型号:71V3576S133PFG 品牌:IDT 备注:这里有71V3576S133PFG多少钱,2025年最近7天走势,今日出价,今日竞价,71V3576S133PFG批发/采购报价,71V3576S133PFG行情走势销售排行榜,71V3576S133PFG报价。
型号 功能描述 生产厂家 企业 LOGO 操作
71V3576S133PFG

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3576S133PFG

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:220.08 Kbytes Page:18 Pages

IDT

71V3576S133PFG

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:220.08 Kbytes Page:18 Pages

IDT

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:220.08 Kbytes Page:18 Pages

IDT

封装/外壳:100-LQFP 包装:托盘 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:220.08 Kbytes Page:18 Pages

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:288.96 Kbytes Page:22 Pages

IDT

更新时间:2025-11-25 17:31:00
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IDT
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公司优势库存 热卖中!
IDT
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原装进口公司现货假一赔百
IDT
23+
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全新原装正品现货,支持订货

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